jiang su changjiang electronic s technology co., ltd to - 126 plastic - encapsulate transistors 3dd13003 transistor ? npn ? features power dissipation p cm : 1.25 w ? t amb=25 ??? collector current i cm : 1.5 a c ollector - base voltage v ( br ) cbo : 700 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit collector - base breakdown voltage v(br) cbo i c = 100 0 | a ? i e =0 700 v collector - emitter breakdown voltage v (br) ceo i c = 10 m a ? i b =0 400 v emitter - base breakdown voltage v(br) ebo i e = 1000 | a ? i c =0 9 v collector cut - off current i cbo v cb = 700 v ? i e =0 1000 a collector cut - off current i ceo v ce = 400 v ? i b =0 500 a emitter cut - off current i ebo v eb = 9 v ? i c =0 1000 a h fe ? 1 ? v ce = 2 v, i c = 0.5 a 8 40 dc current gain h fe ? 2 ? v ce = 10 v, i c = 0.5 m a 5 collector - emitter saturation voltage v ce (sat) i c = 1000m a,i b = 250 m a 1 v b ase - emitter saturation voltage v be (sat) i c =1000 m a, i b = 250m a 1.2 v b ase - emitter voltage v be i e = 2000 m a 3 v transition frequency f t v ce =10v,ic=100ma f =1mhz 5 mhz fall time t f 0.5 s storage time t s i c =1a, i b1 = - i b2 =0.2a v cc =100v 2.5 s classification of h fe (1) r ank r ange 8 - 15 15 - 20 20 - 25 25 - 30 3 0 - 35 35 - 40 1 2 3 to ?a 126 1.base 2.collector 3 . emitter
d c a a1 b b1 e p l l1 e e1 t o-126 p ackage outline dimensions symbol a a1 b b1 c d e e e1 l l1 p |? min 2.500 1.100 0.660 1.170 0.450 7.400 10.600 4.480 15.300 2.100 3.900 3.000 max 2.900 1.500 0.860 1.370 0.600 7.800 11.000 4.680 15.700 2.300 4.100 3.200 min 0.098 0.043 0.026 0.046 0.018 0.291 0.417 0.176 0.602 0.083 0.154 0.118 max 0.114 0.059 0.034 0.054 0.024 0.307 0.433 0.184 0.618 0.091 0.161 0.126 dimensions in millimeters dimensions in inches 0.090typ 2.290typ |?
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